Direct Conversion Mixer for WiFi 802.11a

Assets

References

Specifications

Metric Target fmin fc fmax Achieved
Center Frequency (fc) [GHz] 4.9 4.5 4.89 5.26 4.89
Tuning Range [%] 15 15.6
Phase Noise @ 100 kHz [dBc/Hz] <= -92 -94.8 -96.6 -90.4 -90.4
Phase Noise @ 1 MHz [dBc/Hz] <= -117 -115 -117.1 -116.3 -115
FOM @ 1 MHz [dBc/Hz] >= 182 179.8 182.7 182.5 179.8

Research

A Voltage Controlled Oscillator (VCO) is an oscillator whose frequency varies in response to an input control voltage. The gain (KVCO) is generally linear in the VCO's tunable range.

RF Microelectronics.pdf#page=545&rect=73,495,482,653#invert
RF Microelectronics, p.520

RF Microelectronics, page 545

A popular choice for RF VCO's is LC Oscillators with a Varactor where the oscillation frequency is determined by

ωosc=1L1(C1+Cvar)

Design

!voltage-controlled-oscillator-sch.svg

An initial estimation of the power budget can be made from the FOM specification (182 dBc/Hz) and target phase noise (-117 dBc/Hz). This comes out to about 7.6 mW, quite large for the requirements.

FOMVCO=(f0Δf)|dB2PN(Δf)|dBcHzPdiss|dBm
FOM = 182
f0 = 4900
df = 1
PN = -117

@[Pdiss::7.593 mW] = 10^((20*log10(f0/df) - PN - FOM)/10) mW
@[Imax::8.436 mA] = Pdiss / 0.9V

The oscillation condition of an LC oscillator is given by gmRp1, where gm is the transconductance of the mosfet (M1,M2) and Rp is the parasitic resistance of the inductor (L1,L2). In this pdk, the Q factor is about 16 at 4.9 MHz. The minimum gm required is about 1 mS.

Q=ωLRp
Q = 16
L = 1.5 nH
f0 =4.9 GHz

Rp = Q * L * 2pi * f0
gm = 1/Rp 

The required gm is easily attainable, and a simple parametric sweep can be used to determine the width based on ID and gm. So in consideration of noise, ID is selected 1 mA and a gm/ID ratio of 20 is targeted. This comes out to a width of 60 μm.

The total capacitance needed for a 4.9 GHz LC tank with a 1.5 nH inductor is 700 fF. Frequency must be tunable to 4.9 GHz ± 7.5% (4.5325 to 5.2675 GHz). When CvarC1, the range of Cvar can be estimated with

Δωosc1L1C1Cvar2Cvar22C1
f0 = 4.9 GHz
L = 1.5 nH
C = 1/ ((2pi * f0)^2 * L)

df = 0.15 * f0
dC = 2pi * df * sqrt(L * C) * 2 * C

So the CMOS varactors need to have a tunable range of 210 fF between 0-0.8 V.
According to the Razavi book, increasing the channel length widens the capacitance range. A trail and error approach shows a range of 239 to 13 fF and thus a delta of 226 fF when varactor is sized to 80μm/200nm. C1 will need some tuning to account for the capacitance offset, but calculating it here isn't worthwhile as there are other parasitics that will become apparent in the simulations.

Initial simulation to verify frequency show that fc is about 3.93 GHz with a control voltage of 0.46 V, which is the midpoint of the varactor. Reducing C1 to 320 fF raises fc to 4.91 GHz. #Tuning Range simulation shows the range is 5.28 to 4.45 GHz, or 4.865 GHZ ± 17%. Now some fine tuning finds that 70 μm varactor width and 340 fF for C1 achieves 4.86 GHz ± 15.5%, just a bit closer to the required tuning range.

fmax = 5.23 GHz
fmin = 4.48 GHz

df = fmax - fmin
fc = df/2 + fmin
df_percent = df/fc * 100

Running #Phase Noise simulations show that the noise across the spectrum is 20 dB to high, which is concerning. Attempts to reduce this by playing with mosfet size and Itail show only marginal improvements. The only remaining way to meet these specifications is the use a small inductor. Not sure why this is the case, Q is much lower so I would expect a higher noise. Anyways, this will mean redoing varactor design AHHHHHHHH. Another note is that noise is minimized at low very gm/ID.

# -- transconductance --------
Q = 15.6
L = 0.9 nH
f0 = 4.9 GHz

Rp = Q * L * 2pi * f0
gm = 1/Rp 

# -- varactor ----------------
C = 1/ ((2pi * f0)^2 * L)

df = 0.15 * f0
dC = 2pi * df * sqrt(L * C) * 2 * C

# -- tuning results ----------
fmax = 5.26 GHz
fmin = 4.5 GHz

df = fmax - fmin
fc = df/2 + fmin
df_percent = df/fc * 100
Pdiss = 0.9 * 7.38

f_0V = 4500
f_0p4V = 4890
f_0p8V = 5260

noise_0V = -115
noise_0p4V = -117.1
noise_0p8V = -116.3

FOM_0V = 20*log10(f_0V) - noise_0V - 10*log10(Pdiss)
FOM_0p4V = 20*log10(f_0p4V) - noise_0p4V - 10*log10(Pdiss)
FOM_0p8V = 20*log10(f_0p8V) - noise_0p8V - 10*log10(Pdiss)

A balance was needed between inductor size and varactor size due to the limited Q. This was a bit tricky as small changes could drop the noise performance or fail to converge. Final device sizes in ECE1390 RF A3 - Report.pdf.

Simulations

!Pasted image 20251207001714.png

Tuning Range

Analyses Setup

Direct Plot Form

Phase Noise

Analyses Setup

Direct Plot Form

Results

Transient

!Pasted image 20251207175232.png

Range and Noise

!tuning_range.png
!noise.png

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